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Ultra high purity copper, method for producing the same, and bonding wire made of ultra high purity copper

机译:超高纯铜,其制造方法以及由超高纯铜制成的键合线

摘要

Ultra-high purity copper with a hardness of 40Hv or less and a purity of 8N or more (excluding O, C, N, H, S, P gas components). The above ultra-high purity copper, wherein each element of gas components O, S, and P is 1 wtppm or less. When manufacturing ultra-high purity copper by two-stage electrolysis using an electrolytic solution consisting of a copper nitrate solution, hydrochloric acid is added to the electrolytic solution consisting of the copper nitrate solution, and the electrolytic solution is circulated. A method for producing ultra-high purity copper, in which electrolysis is performed by two-stage electrolysis while removing impurities with a filter by temporarily setting the liquid to 10 ° C or lower. An object of this invention is to obtain the copper material which can be adapted to said thinning (drawing). The purpose is to efficiently produce ultra-high purity copper with a purity of 8N (99.999999wt%) or more, to provide the obtained ultra-high purity copper, and to obtain bonding wires for semiconductor devices that can be made particularly thin And
机译:硬度为40Hv或以下且纯度为8N或以上的超高纯铜(不包括O,C,N,H,S,P气体成分)。上述超高纯度铜,其中气体成分O,S和P中的每种元素为1 wtppm或更少。当使用由硝酸铜溶液构成的电解液通过两阶段电解制造超高纯度铜时,将盐酸添加到由硝酸铜溶液构成的电解液中,并使电解液循环。一种生产超高纯铜的方法,其中通过两步电解进行电解,同时通过将液体暂时设置为10°C或更低的温度用过滤器除去杂质。本发明的目的是获得一种能够适应所述薄化(拉深)的铜材料。目的是有效地生产纯度为8N(99.999999wt%)或更高的超高纯铜,提供所获得的超高纯铜,并获得可以做得特别细的半导体器件用键合线。

著录项

  • 公开/公告号JPWO2006134724A1

    专利类型

  • 公开/公告日2009-01-08

    原文格式PDF

  • 申请/专利权人 日鉱金属株式会社;

    申请/专利号JP20070521216

  • 发明设计人 新藤 裕一朗;竹本 幸一;

    申请日2006-04-24

  • 分类号C22C9;C25C1/12;C25C7/06;

  • 国家 JP

  • 入库时间 2022-08-21 19:37:01

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