VERTICAL SPACER ELECTRODES FOR VARIABLE-RESISTANCE MATERIAL MEMORIES AND VERTICAL SPACER VARIABLE-RESISTANCE MATERIAL MEMORY CELLS

摘要

Variable-resistance memory material cells are contacted by vertical bottom spacer electrodes. Variable-resistance material memory spacer cells are contacted along the edge by electrodes. Processes include the formation of the bottom spacer electrodes as well as the variable-resistance material memory spacer cells. Devices include the variable-resistance memory cells.