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Vertical spacer electrodes for variable-resistance material memories and vertical spacer variable-resistance material memory cells
Vertical spacer electrodes for variable-resistance material memories and vertical spacer variable-resistance material memory cells
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机译:用于可变电阻材料存储的垂直间隔电极和垂直间隔可变材料存储单元
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摘要
Variable-resistance memory material cells are contacted by vertical bottom spacer electrodes. Variable-resistance material memory spacer cells are contacted along the edge by electrodes. Processes include the formation of the bottom spacer electrodes as well as the variable-resistance material memory spacer cells. Devices include the variable-resistance memory cells.
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