APPARATUS AND METHOD FOR MODELING MOS TRANSISTOR

摘要

Disclosed are an apparatus and a method for modeling a MOSFET (Metal-Oxide Semiconductor Field Effect Transistor). The method can include the steps of: establishing an equation and a variable that determine the driving current characteristics of the MOS transistor; generating a random number; converting the random number such that the random number has a value satisfying an equation of a rotated ellipse and determining a variation degree of the variable based on the value of the random number; and outputting driving current distribution of the MOS transistor by using the equation and the variation degree of the variable.