首页>
外国专利>
Method of magnetic tunneling layer processes for spin-transfer torque MRAM
Method of magnetic tunneling layer processes for spin-transfer torque MRAM
展开▼
机译:自旋转移矩MRAM的磁性隧穿层工艺方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for forming a MTJ in a STT-MRAM is disclosed in which the easy-axis CD is determined independently of the hard-axis CD. One approach involves two photolithography steps and two etch steps to form a post in a hard mask which is transferred through a MTJ stack of layers by a third etch process. Optionally, the third etch may stop on the tunnel barrier or in the free layer. A second embodiment involves forming a first parallel line pattern on a hard mask layer and transferring the line pattern through the MTJ stack with a first etch step. A planar insulation layer is formed adjacent to the sidewalls in the line pattern and then a second parallel line pattern is formed which is transferred by a second etch through the MTJ stack to form a post pattern. Etch end point may be controlled independently for hard-axis and easy-axis dimensions.
展开▼