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THERMAL ANNEALING METHOD FOR PREVENTING DEFECTS IN DOPED SILICON OXIDE SURFACES DURING EXPOSURE TO ATMOSPHERE
THERMAL ANNEALING METHOD FOR PREVENTING DEFECTS IN DOPED SILICON OXIDE SURFACES DURING EXPOSURE TO ATMOSPHERE
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机译:防止暴露于大气中的掺杂氧化硅表面中缺陷的热退火方法
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摘要
A thermal anneal process for preventing formation of certain BPSG surface defects following an etch or silicon clean step using a fluorine and hydrogen chemistry. The thermal anneal process is carried out while protecting the wafer from moisture, by heating the wafer to a sufficiently high temperature for a sufficient duration of time to thermally diffuse boron and/or phosphorus materials separated from silicon near the surface of the doped glass layer into the bulk of the layer. The thermal anneal process is completed by cooling the wafer to a sufficiently low temperature to fix the distribution of the boron and/or phosphorus materials in bulk of the doped glass layer.
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