首页>
外国专利>
METHOD OF MAKING AN INTEGRALLY GATED CARBON NANOTUBE FIELD IONIZER DEVICE
METHOD OF MAKING AN INTEGRALLY GATED CARBON NANOTUBE FIELD IONIZER DEVICE
展开▼
机译:制作集成门碳纳米管场电离器的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method of making an integrally gated carbon nanotube field ionization device comprising forming a first insulator layer on a first side of a substrate, depositing a conductive gate layer on the first insulator layer, forming a cavity in the substrate by etching a second side of the substrate to near the first insulator layer, wherein the second side is opposite the first side and wherein a portion of the first insulator is over the cavity, etching an aperture in the portion of the first insulator layer and the conductive gate layer to form an aperture sidewall, depositing a second insulator layer, removing the second insulator layer from the top surface, depositing a metallization layer over the second insulator layer, depositing a catalyst layer on the metallization layer and growing a carbon nanotube from the catalyst layer.
展开▼