ANGLED IMPLANTS WITH DIFFERENT CHARACTERISTICS ON DIFFERENT AXES

摘要

One embodiment relates to a method of forming an integrated circuit. In this method, at least one dopant species of a first conductivity type is implanted in a first manner along a first axis to form first pocket implant regions extending at least partially under some gates. At least one dopant species of the first conductivity type is then implanted in a second manner that differs from the first manner along a second axis that is laterally rotated with respect to the first axis to form second pocket implant regions extending at least partially under other gates.