首页>
外国专利>
Method for Suppressing Lattice Defects in a Semiconductor Substrate
Method for Suppressing Lattice Defects in a Semiconductor Substrate
展开▼
机译:抑制半导体衬底中晶格缺陷的方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method for suppressing the formation of leakage-promoting defects in a crystal lattice following dopant implantation in the lattice. The process provides a compressive layer of atoms, these atoms having a size greater than that of the lattice member atoms. The lattice is then annealed for a time sufficient for interstitial defect atoms to be emitted from the compressive layer, and in that manner energetically stable defects are formed in the lattice at a distance from the compressive layer.
展开▼