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Metal Gates of PMOS Devices Having High Work Functions
Metal Gates of PMOS Devices Having High Work Functions
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机译:具有高功函数的PMOS器件的金属门
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摘要
A semiconductor structure includes a refractory metal silicide layer; a silicon-rich refractory metal silicide layer on the refractory metal silicide layer; and a metal-rich refractory metal silicide layer on the silicon-rich refractory metal silicide layer. The refractory metal silicide layer, the silicon-rich refractory metal silicide layer and the metal-rich refractory metal silicide layer include same refractory metals. The semiconductor structure forms a portion of a gate electrode of a metal-oxide-semiconductor device.
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