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FORMATION OF A SILICON OXIDE INTERFACE LAYER DURING SILICON CARBIDE ETCH STOP DEPOSITION TO PROMOTE BETTER DIELECTRIC STACK ADHESION
FORMATION OF A SILICON OXIDE INTERFACE LAYER DURING SILICON CARBIDE ETCH STOP DEPOSITION TO PROMOTE BETTER DIELECTRIC STACK ADHESION
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机译:在碳化硅刻蚀停止沉积过程中形成氧化硅界面层,以促进更好的介电粘合
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摘要
In accordance with the present teachings, semiconductor devices and methods of making semiconductor devices and dielectric stack in an integrated circuit are provided. The method of forming a dielectric stack in an integrated circuit can include providing a semiconductor structure including one or more copper interconnects and forming an etch stop layer over the semiconductor structure in a first processing chamber. The method can also include forming a thin silicon oxide layer over the etch stop layer in the first processing chamber and forming an ultra low-k dielectric layer over the thin silicon oxide layer in a second processing chamber, wherein forming the thin silicon oxide layer improves adhesion between the etch stop layer and the ultra low-k dielectric as compared to a dielectric stack that is devoid of the thin silicon oxide layer between the etch stop layer and the ultra low-k dielectric.
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