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Method for manufacturing single crystal nano-structures capable of controlling morphology and device for manufacturing nano-structures

机译:能够控制形态的单晶纳米结构的制造方法及制造纳米结构的装置

摘要

The present invention discloses a method for manufacturing single crystal nano-structures capable of controlling morphology so as to allow materials with various morphologies to form nano-structures in desired morphologies and a device for manufacturing the nano-structures, according to variables such as a temperature of a target member in a vacuum system, an applied voltage applied to the target member, a pulse width, a kind of precursors after vaporization of the target member, etc. Each of the nano-structures of the present invention can be used as a unit of a storage medium so that a high density storage medium can be manufactured and various devices can be miniaturized by using particular electrical and physical characteristics that are exhibited in a nano-size semiconductor or metal.
机译:本发明公开了一种制造单晶纳米结构的方法和一种用于制造纳米结构的装置,该方法能够控制形态以允许具有各种形态的材料形成期望的形态的纳米结构,并且提供了一种用于制造纳米结构的装置,该装置根据诸如温度的变量而定。真空系统中靶部件的厚度,施加到靶部件上的电压,脉冲宽度,靶部件汽化后的前体的种类等。本发明的每种纳米结构都可以用作纳米管。通过使用纳米级半导体或金属中表现出的特定电气和物理特性,可以制造高密度的存储介质,并可以使各种设备小型化。

著录项

  • 公开/公告号US2009084310A1

    专利类型

  • 公开/公告日2009-04-02

    原文格式PDF

  • 申请/专利权人 SI-KYUNG CHOI;HYUN-JUNG KIM;

    申请/专利号US20070987412

  • 发明设计人 HYUN-JUNG KIM;SI-KYUNG CHOI;

    申请日2007-11-29

  • 分类号C30B23/00;C30B11/00;

  • 国家 US

  • 入库时间 2022-08-21 19:33:09

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