The invention relates to a power circuit with a emitter-switched bipolar transistor (ESBT) (T2) and a MOS transistor (T3) connected downstream of the bipolar transistor. The bipolar transistor (T2) is controlled by a Mosfet transistor (T1). A zener diode (D1) which is disposed between the exit of the MOS transistor (T3) and the base of the bipolar transistor (T2) transmits the return current of the base collector diode of the bipolar transistor (T2) to the foot point of the ESBT (T2). Furthermore, a voltage source (U) is inserted between the collector of the bipolar transistor (T2) and the drain of the Mosfet transistor (T1).
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