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METHOD TO FABRICATE III-N SEMICONDUCTOR DEVICES ON THE N-FACE OF LAYERS WHICH ARE GROWN IN THE III-FACE DIRECTION USING WAFER BONDING AND SUBSTRATE REMOVAL
METHOD TO FABRICATE III-N SEMICONDUCTOR DEVICES ON THE N-FACE OF LAYERS WHICH ARE GROWN IN THE III-FACE DIRECTION USING WAFER BONDING AND SUBSTRATE REMOVAL
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机译:利用晶圆键合和基体去除在III面方向上生长的层的N面上制造III-N半导体器件的方法
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摘要
A method for fabricating III-N semiconductor devices on the N-face of layers comprising (a) growing a III-nitride semiconductor device structure in a Ga-polar direction on a substrate, (b) attaching a Ga face of the III-nitride semiconductor device structure to a host substrate, and (c) removing the substrate to expose the N-face surface of the III-nitride semiconductor device structure. An N-polar (000-1) oriented III-nitride semiconductor device is also disclosed, comprising one or more (000-1) oriented nitride layers, each having an N-face opposite a group III-face, wherein at least one N-face is an at least partially exposed N-face, and a host substrate attached to one of the group III-faces.
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