SOI wafer fabricated with extra thick deposited BOX layer using surface activated bonding at room temperature for customized power devices

摘要

We proposed the fabrication of an SO! wafer for customized power devices by chemical vapor deposition (CVD) of a BOX layer and surface-activated bonding (SAB). We demonstrated that the use of this SO! wafer can form an extra thick BOX layer of 10 μm and can be fabricated at temperature below 500 °C without thermal stress. Therefore, we believe that this SO! wafer can contribute to the improvement of customized power devices with breakdown voltages of over 500V.