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Design structure for implementing oxide leakage based voltage divider network for integrated circuit devices
Design structure for implementing oxide leakage based voltage divider network for integrated circuit devices
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机译:用于集成电路器件的基于氧化物泄漏的分压器网络的设计结构
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摘要
A design structure embodied in a machine readable medium used in a design process includes a voltage divider device, including a double gate field effect transistor (FET) having a first gate and a second gate disposed at opposite sides of a body region; the first and second gates configured to have an input voltage coupled thereacross; and at least one of a source of the FET and a drain of the FET configured to have an output voltage taken therefrom; wherein the output voltage represents a divided voltage with respect to the input voltage.
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