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Nonvolatile memory devices having floating gate electrodes with nitrogen-doped layers on portions thereof
Nonvolatile memory devices having floating gate electrodes with nitrogen-doped layers on portions thereof
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机译:具有在其部分上具有氮掺杂层的浮置栅电极的非易失性存储器件
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摘要
Nonvolatile memory devices are provided including an integrated circuit substrate and a charge storage pattern on the integrated circuit substrate. The charge storage pattern has a sidewall and a tunnel insulating layer is provided between the charge storage pattern and the integrated circuit substrate. A gate pattern is provided on the charge storage pattern. A blocking insulating layer is provided between the charge storage pattern and the gate pattern. The sidewall of the charge storage pattern includes a first nitrogen doped layer. Related methods of fabricating nonvolatile memory devices are also provided herein.
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