首页> 外国专利> Material and method of forming yttria-stabilized zirconia to minimize low-temperature degradation

Material and method of forming yttria-stabilized zirconia to minimize low-temperature degradation

机译:形成氧化钇稳定的氧化锆以最小化低温降解的材料和方法

摘要

The invention is directed to a material and a method of substantially eliminating destructive low-temperature, humidity-enhanced phase transformation of yttria-stabilized zirconia in general, as well as eliminating low-temperature degradation of yttria-stabilized tetragonal zirconia polycrystalline ceramic (Y-TZP). The martensitic-type phase transformation from tetragonal to monoclinic is accompanied by severe strength degradation in a moist environment at low-temperature, specifically at room temperature as well as at body temperature. This class of materials has been chosen as the packaging material for small implantable neural-muscular sensors and stimulators because of the high fracture toughness and high mechanical strength. This destructive phase transformation has been substantially eliminated, thus ensuring the safety of long-term implants, by subjecting the sintered components to post-machining hot isostatic pressing, such that the average grain size is less than about 0.5 microns.
机译:本发明涉及一种材料和一种方法,该材料和方法通常基本上消除了氧化钇稳定的氧化锆的破坏性的低温,提高湿度的相变,并且消除了氧化钇稳定的四方氧化锆多晶陶瓷(Y- TZP)。从四方到单斜的马氏体型相变伴随着在低温,特别是在室温以及在体温的潮湿环境中强度的严重降低。由于高断裂韧性和高机械强度,此类材料已被选作小型可植入神经肌肉传感器和刺激器的包装材料。这种破坏性的相变已基本消除,从而通过对烧结后的零件进行机加工后的热等静压,从而确保平均晶粒尺寸小于约0.5微米,从而确保了长期植入物的安全性。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号