Method for measuring analog channel resistance of a semiconductor device having a gate, a source, a drain, a drain sense and a source sense

摘要

A semiconductor device and a method for measuring an analog channel resistance thereof are provided. The semiconductor device includes a substrate, a gate insulating layer and a gate formed on the substrate, a source and a drain formed in the substrate and at both sides of the gate, a source sense connected to the source, and a drain sense connected to the drain.