Using a polaron interaction zone as an interface to integrate a plasmon layer and a semiconductor detector

摘要

An integrated plasmon detector includes a top layer of material adapted to generate a plasmon when excited by a beam of light incident onto a surface of the top layer, an interface layer joined to the top layer opposite from the surface of the top layer and adapted to slow polarons emitted by the plasmon to thermal electrons, and a collector layer joined to the interface layer opposite from the top layer and adapted to collect the thermal electrons from the interface layer.