Effect of Electron-Electron and Electron-Plasmon Interactions on Hot Carrier Transport in Semiconductors

摘要

We present an Ensemble Monte Carlo (EMC) study of the electron-electron interaction in semiconductors, utilizing the full dielectric function to determine the contribution of the collective modes of the electron gas, i.e. the plasma oscillations, to the scattering terms. The transient dynamic response of electrons under high electric fields in n-Si and the quasiballistic motion of high energy electrons in n-GaAs are investigated.