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Photoelectric device grinding process and device grinding process

机译:光电器件研磨工艺及器件研磨工艺

摘要

A photoelectric device grinding process comprising the following steps is disclosed. A wafer comprising a plurality of chip units is provided. Each chip unit has at least a photoelectric device disposed on a surface layer. A dielectric substrate is attached to the wafer with glue having a plurality of spacers therein such that the photoelectric devices face the dielectric layer. The spacers maintain a gap between the dielectric substrate and the wafer. Thereafter, the dielectric substrate surface away from the wafer or the wafer surface away from the dielectric substrate or both is ground. The grinding process is particularly suitable for preventing any possible damage to the photoelectric devices on a wafer.
机译:公开了一种包括以下步骤的光电器件研磨工艺。提供了包括多个芯片单元的晶片。每个芯片单元具有至少一个布置在表面层上的光电器件。用其中具有多个间隔物的胶将介电衬底附接到晶片,使得光电器件面对介电层。间隔物在电介质衬底和晶片之间保持间隙。此后,研磨远离晶片的介电基板表面或远离介电基板的晶片表面或两者。研磨过程特别适合于防止对晶片上的光电器件的任何可能损坏。

著录项

  • 公开/公告号US7456051B2

    专利类型

  • 公开/公告日2008-11-25

    原文格式PDF

  • 申请/专利权人 KUO-CHUNG YEE;CHIH-LUNG CHEN;

    申请/专利号US20040710696

  • 发明设计人 KUO-CHUNG YEE;CHIH-LUNG CHEN;

    申请日2004-07-29

  • 分类号H01L21/30;

  • 国家 US

  • 入库时间 2022-08-21 19:29:16

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