首页> 外国专利> Memory module including a plurality of integrated circuit memory devices and a plurality of buffer devices in a matrix topology

Memory module including a plurality of integrated circuit memory devices and a plurality of buffer devices in a matrix topology

机译:存储器模块,其包括矩阵拓扑中的多个集成电路存储器件和多个缓冲器件

摘要

A memory module includes a plurality of signal paths that provide data to a memory module connector interface from a plurality of respective integrated circuit buffer devices that access data from an associated plurality of integrated circuit memory devices. The memory module forms a plurality of “data slices” or a plurality of portions of the memory module data bus that is coupled to the respective integrated circuit buffer devices. Each integrated circuit buffer device is also coupled to a bus that provides control information that specifies an access to at least one integrated circuit memory devices. According to an embodiment, a SPD device stores information regarding configuration information of the memory module. In embodiments, at least one integrated circuit buffer devices access information stored in the SPD device. In a package embodiment, a package houses an integrated circuit buffer die and a plurality of integrated circuit memory dies.
机译:一种存储模块,包括多个信号路径,所述多个信号路径从多个相应的集成电路缓冲器设备向存储模块连接器接口提供数据,所述多个集成电路缓冲器设备从关联的多个集成电路存储器设备访问数据。存储器模块形成存储器模块数据总线的多个“数据切片”或多个部分,所述多个“数据切片”或存储器模块的多个部分耦合到相应的集成电路缓冲装置。每个集成电路缓冲器设备还耦合到总线,该总线提供指定对至少一个集成电路存储设备的访问的控制信息。根据一个实施例,SPD设备存储关于存储模块的配置信息的信息。在实施例中,至少一个集成电路缓冲器设备访问存储在SPD设备中的信息。在封装实施例中,封装容纳集成电路缓冲芯片和多个集成电路存储芯片。

著录项

  • 公开/公告号US7464225B2

    专利类型

  • 公开/公告日2008-12-09

    原文格式PDF

  • 申请/专利权人 ELY TSERN;

    申请/专利号US20050236401

  • 发明设计人 ELY TSERN;

    申请日2005-09-26

  • 分类号G06F12;

  • 国家 US

  • 入库时间 2022-08-21 19:28:41

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