METHOD FOR NEAR-SURFACE ALLOYING SEMICONDUCTOR COMPOUND OF VI GPOUP BY GPOUP ELEMENTS WHEN FORMATION OF BARRIER STRUCTURES BY ACOUSTIC WAVE

摘要

A method for near-surface alloying semiconductor compounds of ABgroup by group element while formation of electric barrier structures by acoustic wave induced by a laser pulse comprises sputtering an alloying element film to semiconductor polish face and irradiation of it by laser pulse with duration 20 ns of ruby or excimer laser KrF having energy density enough to generate acoustic wave. The film of alloying element of group is sputtered to surface of semiconductor compounds ABwith thickness which more than heat-wave penetration depth, but less than shock-wave formation depth under pulsed laser irradiation.