Semiconductor arrangement with a PN transition and method for the production of a semiconductor arrangement

摘要

A semiconductor system ( 200 ), particularly a diode, having a p-n junction is proposed, that is formed as a chip having an edge area, which includes a first layer ( 2 ) of a first conductivity type and a second layer ( 1, 3 ) of a second conductivity type; the second layer ( 1, 3 ) including at least two sublayers ( 1, 3 ); both sublayers ( 1, 3 ) forming a p-n junction with the first layer ( 2 ); the p-n junction of the first layer ( 2 ) with the first sublayer ( 3 ) being provided exclusively in the interior of the chip, and the p-n junction between the first layer ( 2 ) and the second sublayer ( 1 ) being provided in the edge area of the chip; for each cross-section of the chip area parallel to the chip plane, the first sublayer ( 3 ) corresponding only to a part of such a cross-section.