It includes the doped column of multiple formation by spreading rapidly that a kind of manufacture high-pressure MOS FFT, which has voltage sustaining region,. A kind of high-voltage semi-conductor device has substrate first or the second conduction type, on the epitaxial layer of the first conduction type, it is formed in the epitaxial layer with voltage sustaining region, voltage sustaining region includes the groove that filling is at least formed along lateral wall that column have the second conductive type, the column include 11 diffusion areas and the second diffusion zone, first diffusion zone be connected to that the 2nd area and the second area have a junction depth measurement with trench sidewall be less than the first area of junction depth and second conduction type in third region that, from the surface of epitaxial layer, to intersect at the second conduction type of petite person first area and second area.
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