This aims to provide a laminated structure and an integrated structure of a high production efficiency for a CIS-family thin-film solar cell, which can produce a highly resistive buffer layer of the CIS-family thin-film solar cell efficiently on a series of production lines and which needs no treatment of wastes or the like, and a manufacturing method for the structures. The CIS-family thin-film solar cell has a back electrode, a p-type CIS-family optically absorptive layer, a highly resistive buffer layer and an n-type transparent conductive film laminated sequentially in the recited order. The highly resistive buffer layer and the n-type transparent conductive film are formed of thin films of a zinc oxide group. The buffer layer contacts the p-type CIS-family optically absorptive layer directly, and has a resistivity of 500 cm or higher.
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