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SiO DEPOSITION MATERIAL, Si POWDER FOR SiO RAW MATERIAL, AND METHOD FOR PRODUCING SiO

机译:SiO沉积材料,用于SiO原料的Si粉末和制备SiO的方法

摘要

A silicon monoxide or a silicon monoxide vapor deposition material is characterized in that a hydrogen gas content is not lower than 120 ppm, and a silicon monoxide vapor deposition material is characterized in that the hydrogen gas content is not lower than 150 ppm. A film deposition rate is increased when the silicon monoxide is deposited on a substrate, so that a silicon monoxide deposited film can efficiently be formed. A sublimation rate can be increased in producing the silicon monoxide by setting the hydrogen gas content of the raw material silicon powders to 30 ppm or more, so that the silicon monoxide can efficiently be produced at low cost. Therefore, the silicon monoxide producing method of the present invention can widely be applied as a method for producing vapor deposition materials for packaging materials having transparency and barrier properties which are used for foods, medical products, medicinal products, and the like or vapor deposition materials for lithium battery electrode materials having silicon monoxide deposited films.
机译:一氧化硅或一氧化硅气相沉积材料的特征在于氢气含量不低于120ppm,一氧化硅气相沉积材料的特征在于氢气含量不低于150ppm。当一氧化硅沉积在基板上时,膜沉积速率增加,从而可以有效地形成一氧化硅沉积膜。通过将原料硅粉的氢气含量设定为30ppm以上,可以提高一氧化硅的制造中的升华率,因此可以以低成本有效地制造一氧化硅。因此,本发明的一氧化硅的制造方法可以广泛地用作制造用于食品,医药品,药品等的具有透明性和阻隔性的包装材料的蒸镀材料或蒸镀材料的制造方法。用于具有一氧化硅沉积膜的锂电池电极材料。

著录项

  • 公开/公告号EP1792874A4

    专利类型

  • 公开/公告日2009-07-22

    原文格式PDF

  • 申请/专利权人 OSAKA TITANIUM TECHNOLOGIES CO. LTD.;

    申请/专利号EP20050770377

  • 发明设计人 KIZAKI SHINGO;NISHIOKA KAZUO;

    申请日2005-08-09

  • 分类号C01B33/113;C23C14/24;

  • 国家 EP

  • 入库时间 2022-08-21 19:17:49

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