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INTEGRATED PROCESS SYSTEM AND PROCESS SEQUENCE FOR PRODUCTION OF THIN FILM TRANSISTOR ARRAYS USING DOPED OR COMPOUNDED METAL OXIDE SEMICONDUCTOR
INTEGRATED PROCESS SYSTEM AND PROCESS SEQUENCE FOR PRODUCTION OF THIN FILM TRANSISTOR ARRAYS USING DOPED OR COMPOUNDED METAL OXIDE SEMICONDUCTOR
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机译:使用掺杂或复合金属氧化物半导体生产薄膜晶体管阵列的集成过程系统和过程顺序
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摘要
The present invention generally relates to an integrated processing system and process sequence that may be used for thin film transistor (TFT) fabrication. In fabricating TFTs, numerous processes may be performed on a substrate to ultimately produce the desired TFT. These processes may be performed in numerous processing chambers that may be coupled to a common transfer chamber. The arrangement of the processing chambers and the sequence in which the substrate may pass through the processing chambers may affect the device performance. By placing specific processing chambers around a common transfer chamber, multiple processes may be performed without undue exposure of the TFT to atmosphere. Alternatively, by passing the substrate sequentially through specific processing chambers, multiple processes may be performed without undue exposure of the TFT to atmosphere.
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