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GAS MANIFOLDS FOR USE DURING EPITAXIAL FILM FORMATION
GAS MANIFOLDS FOR USE DURING EPITAXIAL FILM FORMATION
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机译:气膜形成期间使用的气体歧管
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摘要
The present invention provides methods, systems, and apparatus for epitaxial film formation that includes an epitaxial chamber (101) adapted to form an epitaxial layer on a substrate; a deposition gas manifold (103) adapted to supply at least one deposition gas and a carrier gas to the epitaxial chamber; and an etchant gas manifold (109), separate from the deposition gas manifold, and adapted to supply at least one etchant gas and a carrier gas to the epitaxial chamber.
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