首页> 外国专利> PROCESS FOR FABRICATING ALUMINIUM NITRIDE, AND ALUMINIUM NITRIDE WAFER AND POWDER

PROCESS FOR FABRICATING ALUMINIUM NITRIDE, AND ALUMINIUM NITRIDE WAFER AND POWDER

机译:制备氮化铝以及氮化铝晶片和粉末的方法

摘要

The invention relates to a process for fabricating aluminium nitride in which a multilayer structure comprising aluminium-based laminated products are prepared by stacking or winding them and said multilayer structure is heated in a nitrogen-containing atmosphere, most of the nitriding taking place during a phase in which the temperature of the nitrogen-containing atmosphere is maintained between 400°C and 660°C. The invention makes it possible to obtain aluminium nitride by an economic process that requires neither the use of aluminium powder as raw material nor the use of very high temperatures. The aluminium nitride obtained comprises particles the microscopic structure of which is laminated.
机译:本发明涉及一种制造氮化铝的方法,其中通过堆叠或缠绕将包含铝基层压产品的多层结构制备,并将所述多层结构在含氮气氛中加热,大部分氮化在相中进行。其中含氮气氛的温度保持在400℃至660℃之间。本发明使得可以通过经济的方法获得氮化铝,该经济的方法既不需要使用铝粉作为原料,也不需要使用非常高的温度。所获得的氮化铝包括其微观结构被层压的颗粒。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号