Program method and data read method of non-volatile memory device using six threshold voltage levels, and non-volatile memory device using the same

摘要

A program method for nonvolatile memory device using the six threshold voltage level and a data read method, and a non-volatile memory for use in the method and the program data read method an apparatus is disclosed. Program process according to the invention is a method for programming a nonvolatile memory device including a first nonvolatile memory cell and a second non-volatile memory cells which can each be programmed with sequentially increasing the first to the sixth threshold voltage level. Program method according to the invention having a first and second page data program stage, the third page, the data program stage, the fourth page and the fifth page data program stage data program stage. First and second page data program step is to program the first and the second page of data to the first nonvolatile memory cell and a volatile memory cell and the second fire first threshold voltage level or a second threshold voltage level. The page data is programmed in the program step 3, the first and second, the third threshold voltage level or the fourth threshold voltage level of the data page 3 in the first nonvolatile memory cell according to the second page data. The page data program stage 4 is programmed in the first claim, the claim the 4 pages of data the first nonvolatile memory cell or the second nonvolatile memory cell according to page 3 Data 5 the threshold voltage level or the sixth threshold voltage level . Claim page 5 data program step is to program into the first according to page 4, data, and the third threshold voltage level of the fifth page of data to the first nonvolatile memory cell or a volatile memory cell and the second fire or the fourth threshold voltage level .