首页> 外国专利> METHOD FOR FABRICATING THE CDSE QUANTUM DOT DOPED WITH MG

METHOD FOR FABRICATING THE CDSE QUANTUM DOT DOPED WITH MG

机译:MG掺杂的CDSE量子点的制造方法

摘要

A manufacturing method of a cadmium selenide quantum dot doped with magnesium is provided to control the energy band-gap of the cadmium selenide and improve luminous efficiency. A manufacturing method of a cadmium selenide quantum dot doped with magnesium comprises: a step(S110) forming a first solution by dissolving cadmium source and magnesium source in solvent paraffinic oil and oleic acid and forming a second solution by dissolving a selenium(Se) metal in the solvent paraffinic oil; a step(S120) creating the cadmium selenide quantum dot doped with magnesium by adding the first solution in the second solution or the second solution in the first solution; a step(S130) growing the cadmium selenide quantum dot doped with magnesium in order to have predetermined light emission region wavelength and band-gap; and a step(S140) washing the grown cadmium selenide quantum dot doped with magnesium.
机译:本发明提供一种掺杂镁的硒化镉量子点的制造方法,以控制硒化镉的能带隙,提高发光效率。掺杂镁的硒化镉量子点的制造方法包括:步骤(S110),将镉源和镁源溶解在溶剂石蜡油和油酸中形成第一溶液,并溶解硒(Se)金属形成第二溶液。在溶剂石蜡油中;步骤(S120),通过在第二溶液中加入第一溶液或在第一溶液中加入第二溶液,形成掺杂镁的硒化镉量子点。步骤(S130),使掺杂有镁的硒化镉量子点生长,以具有预定的发光区域波长和带隙。步骤(S140),洗涤生长的掺有镁的硒化镉量子点。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号