首页> 外国专利> GAS SUPPLYING APPARATUS, APPARATUS FOR DEPOSITING THIN FILM ON WAFER HAVING THE SAME AND METHOD FOR DEPOSITING THIN FILM ON WAFER USING THE SAME

GAS SUPPLYING APPARATUS, APPARATUS FOR DEPOSITING THIN FILM ON WAFER HAVING THE SAME AND METHOD FOR DEPOSITING THIN FILM ON WAFER USING THE SAME

机译:气体供应装置,用于在晶片上沉积薄膜的装置具有相同的用途和用于在晶片上沉积薄膜的方法具有相同的装置

摘要

A thin film depositing apparatus employing a fuel gas supplying apparatus is provided to deposit a thin film with uniform thickness and improve deposition rate by supplying plural gases through one gas supplying apparatus. A thin film depositing apparatus employing a fuel gas supplying apparatus comprises the following units. A lead plate(210) includes a supply opening for supplying fuel gas. A spreading plate(220) is placed at a predetermined distance from the lead plate. A spraying plate(230) is positioned at a determined distance below the spreading plate. A plurality of through-holes(221) are combined with a first spreading space of the spreading plate.
机译:提供一种采用燃料气体供应设备的薄膜沉积设备,以通过一个气体供应设备供应多种气体来沉积具有均匀厚度的薄膜并提高沉积速率。采用燃料气体供应设备的薄膜沉积设备包括以下单元。铅板(210)包括用于供给燃料气体的供给口。扩散板(220)被放置在距铅板预定距离处。喷涂板(230)以一定的距离定位在散布板下方。多个通孔(221)与扩展板的第一扩展空间结合。

著录项

  • 公开/公告号KR20090011410A

    专利类型

  • 公开/公告日2009-02-02

    原文格式PDF

  • 申请/专利权人 INTEGRATED PROCESS SYSTEMS LTD.;

    申请/专利号KR20070074952

  • 发明设计人 AN CHUL HYUN;PARK SANG JUN;

    申请日2007-07-26

  • 分类号C23C16/455;

  • 国家 KR

  • 入库时间 2022-08-21 19:14:03

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