EEPROM CELL, METHOD OF FORMING A EEPROM CELL, AND METHOD OF DATA READING IN A EEPROM CELL

摘要

An EEPROM cell, a manufacturing method thereof, a method for reading data in the same are provided to increase an on cell current of a memory cell by supplying a high voltage to a word line. A memory transistor(102) includes a first gate structure and a source/drain region. The first gate structure has a tunnel oxide film, a floating gate electrode, a dielectric film pattern, and a control gate electrode. A selection transistor(104) is connected to the memory transistor, and includes a second gate structure and a source/drain region. The second gate structure has a gate oxide film pattern and a gate electrode. An output terminal of a charge pumping circuit(110) is connected to the gate electrode of the second gate structure in order to supply a boosted voltage to the gate electrode of the selection transistor. A resistance line(140) connects the output terminal of the charge pumping circuit to the control gate electrode, and includes a resistor.