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CONTROL METHOD OF MAGNETIZATION IN FE-CR THIN FILM MULTILAYERS

机译:FE-CR薄膜多层磁化的磁控方法

摘要

A control method of magnetization in Fe-Cr thin film multilayers can control the location of atom on the Fe thin-film in the Cr atom evaporation and control the magnetization of the Fe-Cr multi-layered thin film. The interface structure of the Fe-Cr multi-layered thin film is transformed by changing the location of the Cr atom at the interface of the inter-layer of the Fe-Cr multi-layered thin film. The Cr atom is positioned between the hollow site and bridge site of the Fe(001) surface. The Fe-Cr multi-layered thin film has the magnetization of -1.8~1.4 muB according to the location of the Cr atom. The Fe-Cr multi-layered thin film is formed by the molecular beam epitaxy method.
机译:Fe-Cr薄膜多层中的磁化的控制方法可以控制Cr原子蒸发中Fe薄膜上的原子的位置,并控制Fe-Cr多层薄膜的磁化。通过改变Fe-Cr多层薄膜的层间界面处的Cr原子的位置,可以改变Fe-Cr多层薄膜的界面结构。 Cr原子位于Fe(001)表面的中空位点和桥位点之间。根据Cr原子的位置,Fe-Cr多层薄膜的磁化强度为-1.8〜1.4μB。通过分子束外延法形成Fe-Cr多层薄膜。

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