首页> 外国专利> PROGNOSTIC SYSTEM OF PROCESS PARAMETER PREDICTING SHAPE OF SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR FABICATION EQUIPMENT HAVING THE PROGNOSTIC SYSTEM OF PROCESS PARAMETER AND METHOD OF USING THE SEMICONDUCTOR FABICATION EQUIPMENT HAVING THE SAME

PROGNOSTIC SYSTEM OF PROCESS PARAMETER PREDICTING SHAPE OF SEMICONDUCTOR STRUCTURE, SEMICONDUCTOR FABICATION EQUIPMENT HAVING THE PROGNOSTIC SYSTEM OF PROCESS PARAMETER AND METHOD OF USING THE SEMICONDUCTOR FABICATION EQUIPMENT HAVING THE SAME

机译:过程参数的预测系统,半导体结构形状的预测,具有过程参数的半导体制造设备,具有相同特征的半导体制造设备的使用方法

摘要

An estimation system of a process parameter of a semiconductor structure, a semiconductor manufacturing apparatus having the estimation system of a process parameter, and a method for using the same are provided to estimate a size of a shape of a semiconductor structure by using an estimation parameter generated after or while manufacturing the semiconductor. Semiconductor structures are reacted with the process gas and the plasma is sequentially produced in a processing chamber. Sensor parameters from the plasma are obtained by using a sensor. Observation parameters from the semiconductor structures detached from the process chamber are obtained by using a measuring unit(15). The selected observation parameters corresponding to the selected semiconductor structures and the process estimation model equation and a boundary condition based on the linearity of the selected sensor parameters are selected(20). One sensor parameter which is firstly manufactured among the remaining semiconductor structures is compared with the boundary condition by using the process estimation unit(25). The semiconductor structures are classified by the process sequence of the semiconductor manufacturing process. The selected semiconductor structures are previously manufactured in comparison with the remaining semiconductor structures.
机译:提供一种半导体结构的工艺参数的估计系统,具有工艺参数的估计系统的半导体制造设备及其使用方法,以通过使用估计参数来估计半导体结构的形状的尺寸。在制造半导体之后或制造过程中产生的。半导体结构与处理气体反应,并在处理室中依次产生等离子体。通过使用传感器获得来自等离子体的传感器参数。通过使用测量单元(15)获得从与处理室分离的半导体结构的观察参数。选择与所选择的半导体结构和工艺估计模型方程相对应的所选择的观察参数以及基于所选择的传感器参数的线性的边界条件(20)。通过使用过程估计单元(25),将其余半导体结构中首先制造的一个传感器参数与边界条件进行比较。通过半导体制造工艺的工艺顺序对半导体结构进行分类。与其余的半导体结构相比,预先制造了所选的半导体结构。

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