ENHANCING METHOD OF OPTICAL PROPERTY OF GALLIUM NITRIDE WAFER

摘要

A method for enhancing an optical property of an N-type gallium nitride wafer is provided to improve an optical property by removing an inner defect at a temperature more than 900°C after annealing a gallium nitride wafer. An N-type gallium nitride wafer(330) is thermally processed at a temperature rising speed less than 20°C per minute. An inner defect is removed by maintaining the N-type gallium nitride wafer at a temperature more than 900°C for a fixed time. The N-type gallium nitride wafer is doped by silicon. Doping concentration of the N-type gallium nitride wafer is more than 10^17/cm^3. The N-type gallium nitride wafer is thermally processed at a nitrogen atmosphere.