ENHANCING METHOD OF OPTICAL PROPERTY OF GALLIUM NITRIDE WAFER

摘要

n -type dopant is heavily doped gallium nitride wafer according to the gallium nitride wafer 20 per minute after the temperature was raised at a rate of less than a certain period of time and maintaining 900 temperature provides a method of improving the optical characteristics of the n- type GaN wafer , characterized in that to eliminate internal defects by a thermal treatment to gradual cooling to below per minute 15 . According to the present invention , as well as to improve the transmission rate and the emission characteristics of the gallium nitride wafer , it is possible to increase the charge density .