METHOD OF MANUFACTURING A HIGH INTEGRATED PHASE CHANGE RANDOM ACCESS MEMORY DEVICE, CAPABLE OF REDUCING THE CONTACT AREA OF A BOTTOM ELECTRODE AND A PHASE CHANGING FILM

摘要

PURPOSE: A method of manufacturing a high integrated phase change random access memory device is provided to steadily maintain the contact area of a bottom electrode and a phase changing film using the first and the second masks.;CONSTITUTION: A method of manufacturing a high integrated phase change random access memory device is as follows. A semiconductor substrate(100) in which a bottom electrode contact(104) is formed is provided. A phase changing film(105) and a conductive layer(107) are accumulated of the semiconductor substrate. The phase changing film and the conductive layer are firstly etched to overlap the phase changing film and the conductive layer with at least two bottom electrodes. The phase changing film and the conductive layer are secondly etched.;COPYRIGHT KIPO 2010