GATE STRUCTURE, METHOD OF MANUFACTURING THE GATE STRUCTURE AND A METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING THE GATE STRUCTURE, CAPABLE OF PREVENTING A SHORT CIRCUIT BETWEEN A PLUG AND A GATE

摘要

PURPOSE: A gate structure, method of manufacturing the gate structure and a method of manufacturing a semiconductor device having the gate structure are provided to prevent contact between a gate electrode and a plug even if the gate electrode and the plug are formed between gate electrodes which are separated from each other by a short distance.;CONSTITUTION: A gate structure(142) includes a gate dielectric layer pattern(110), a gate electrode(114), a first spacer(122), and a passivation layer pattern(132). The gate dielectric layer pattern is formed on the substrate(100), and the gate electrode is formed on the gate insulating layer pattern. A gate electrode includes a lower middle, and upper part: the lower part has a first width(L1), and the central part has a second width(L2) narrower than the first widths. The upper part has a third widths. The first spacer is formed on the lower-sidewall of the gate electrode. The passivation layer pattern is formed on the side wall of the middle part at the gate electrode.;COPYRIGHT KIPO 2010