METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE WITH A BURIED GATE CAPABLE OF PREVENTING A SHORT BETWEEN THE BURIED GATE AND A CONTACT PLUG

摘要

PURPOSE: A method for manufacturing a semiconductor device with a buried gate is provided to prevent a buried gate from being exposed in a contact etching process by implanting nitrogen ions to a gate insulation layer exposed to the outside of the buried gate.;CONSTITUTION: A trench is formed by etching a substrate(21). A gate insulation layer(23A) is formed on the surface of the substrate and the trench. A buried gate(24) is formed by partially filling the trench. An etch barrier layer(26) is formed by post-processing the gate insulation layer. An interlayer dielectric layer(27) is formed on the front surface with the etch barrier layer. A contact hole(28) is formed by etching the interlayer dielectric layer and the etch barrier layer.;COPYRIGHT KIPO 2012