METHOD FOR FORMING A CHALCOGENIDE THIN FILM CAPABLE OF IMPROVING A GAP-FILL PROPERTY

摘要

PURPOSE: A method for forming a chalcogenide thin film is provided to improve a gap fill property by controlling a time to purge a source gas and pressure inside a reactor.;CONSTITUTION: A substrate in which a pattern is formed inside a reactor is loaded(S210). A source gas is supplied to the substrate(S220). A first purge gas is supplied to the substrate in order to purge the source gas supplied to the substrate(S230). A reaction gas for returning the source gas is supplied to the substrate(S240). A second purge gas is supplied to the substrate in order to purge the reaction gas supplied to the substrate(S250).;COPYRIGHT KIPO 2010