SEMICONDUCTOR DEVICE CAPABLE OF MINIMIZING DEPENDABILITY OF A THRESHOLD VOLTAGE DUE TO A BODY BIAS VOLTAGE IN FORMING A RECESS GATE, AND A MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A semiconductor device and a manufacturing method thereof are provided to prevent reduction of an operation range of a transistor according to a body bias voltage by preventing reduction of a current due to source voltage rising.;CONSTITUTION: A semiconductor device(100) includes a recess gate, a silicon epitaxial layer(106), and an insulation film(104). The silicon epitaxial layer and the insulation film are successively formed on a bottom part of the recess gate. A groove(H) is formed inside the semiconductor substrate. The insulation film is formed on a bottom surface of the groove. The silicon epitaxial layer is grown on the insulation film. The recess gate is formed on the groove in which the silicon epitaxial layer is formed.;COPYRIGHT KIPO 2010