ZnO Semiconductor Film The Manufacturing Method for Electronic Device and The Thin Film Transistor Including The ZnO Semiconductor Film

摘要

The present invention can adjust the size of the semiconductor film and a carrier quantity determination using a surface chemical reaction between the precursor ., which is about the ZnO semiconductor film forming method and a thin film transistor including the semiconductor film for an electronic device, ; ZnO semiconductor film forming method for an electronic device of the present invention comprises: a) placing a substrate in a chamber; b) step of the zinc precursor adsorbed on the substrate by injecting a zinc precursor in the chamber; c) injecting a nitrogen or inert gas into the chamber to remove residual zinc precursor; d) forming ZnO semiconductor film by injecting an oxygen precursor into the chamber to react with the zinc precursor formed on the substrate; e) step of injecting a nitrogen or inert gas into the chamber to remove the residual oxygen precursor; f) the a) to e) repeatedly performing the steps; g) performing the ZnO semiconductor film to surface treatment by using an oxygen plasma or ozone repeatedly; h) comprises the step of controlling the nitrogen or oxygen precursor and a step of removing the remaining residual zinc precursor is injected into the inert gas, and i) said step a) to the h) the ZnO semiconductor film thickness by repeating the steps in the chamber . Accordingly, ;, by using a transparent substrate to form a transparent thin film transistor, it is possible to implement a transparent display, the player can use the flexible substrate to implement a flexible display. In addition, the semiconductor film can be increased by determining the mobility is enhanced to form the semiconductor film is reduced by the leakage current characteristics are excellent by controlling the amount of the carrier.