METHOD OF MANUFACTURING InAsSb SEMICONDUCTOR ON LATTICE-MISMATCHED SUBSTRATE AND SEMICONDUCTOR DEVICE BY USING THE SAME

摘要

the present invention is a GaAs substrate , Si substrate , such as cost-effective and easy-to- gudeuk semiconductor substrate in InAs _(1-x) Sb _x provides a semiconductor device manufacturing method for forming a semiconductor layer made of . The present invention is to form the quantum dot layer between the semiconductor substrate and the semiconductor layer to reduce the defects due to the lattice mismatch between the semiconductor substrate and the semiconductor layer . In addition, the present invention can enhance the growth rate of the semiconductor layer , the semiconductor layer formed according to the present invention exhibit a high electron mobility at room temperature . As a result , it is possible to improve the production efficiency and the quality of the semiconductor element .