A process for removing a polymeric material and containing residual metal of ion-implanted photoresist material in a downstream atmospheric the plasma processing system

摘要

A process for removing a polymer containing metal after etching the rear of the state or polymeric photoresist process, material from the surface of a semiconductor wafer with the use of a plasma processing system, after which:the polymer after etching the rear of the state or the polymeric photoresist material is initially in a detachable state is transformed by:Radicals with a high energy and of high density from atmospheric plasma as a result, can be produced by a reaction gas is introduced into the plasma and by the plasma zone on the surface of the semiconductor wafer; andin such a way, the surface of the semiconductor wafer at a distance from the plasma zone is placed, that an ion reaction on the surface is designed to a minimum, while, however, the removal effect of the radicals on the surface is maintained; andthe in the detachable state transformed according to an etching polymer return state or the polymeric photoresist material then in a wet process step is washed away.