A method for improving the imaging quality during the detection of defects in said of a photomask using a ions fine jet system, after whicha) on the masks substrate (30) of the photomask opaque conductor pattern (31, 32, 33a – 33e and 37) are formed;b) between at least some of the opaque conductor pattern (31, 32, 33a – 33e and 37), with the use of the ions fine jet system, connecting lines (35a, 35d) are formed from carbon containing gallium, each of which has a thickness less than the depth of a surface layer and have in each case have a width such that the conducting material layers of the connecting lines (35a, 35d) electromagnetic waves, the for mapping of the conductor pattern of the photomask to a wafer are used, can be transmitted without the connecting lines (35a, 35d); andc) the resulting mask structure with the aid of the ions finely beam system without any imaging of the connecting lines is imaged by the measurement of secondary electrons.
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