首页> 外国专利> Method for manufacturing doped semiconductor components involves providing semiconductor substrate and doping one side of semiconductor substrate with p- or n- doping

Method for manufacturing doped semiconductor components involves providing semiconductor substrate and doping one side of semiconductor substrate with p- or n- doping

机译:用于制造掺杂的半导体部件的方法包括:提供半导体衬底,并用p-或n-掺杂来掺杂半导体衬底的一侧。

摘要

The method involves providing a semiconductor substrate and doping one side of the semiconductor substrate with p- or n -doping. A decal is provided, which is manufactured using a paste of organic binder and a powder such as glass powders or organically modified ceramic powders, which contains doping ions. The decal is applied on the cleaned side of the semiconductor substrate. The semiconductor substrate before endowing is roughened with the help of potassium hydroxide corrosion.
机译:该方法包括提供半导体衬底并用p或n掺杂来掺杂半导体衬底的一侧。提供了一种贴花纸,其使用有机粘合剂的糊剂和包含掺杂离子的粉末(例如玻璃粉或有机改性的陶瓷粉)制成。贴花纸贴在半导体基板的清洁面上。赋予力之前的半导体衬底借助于氢氧化钾腐蚀而被粗糙化。

著录项

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号