Method for producing a layer system on a dielectric substrate having a first reflecting metal layer and a layer structure, comprises applying the first metal layer on the substrate by a vacuum coating process

摘要

The method for producing a layer system on a dielectric substrate (10) having a first reflecting metal layer (20) and a layer structure, which is arranged on the side of the first metal layer opposite to the substrate with a further reflecting metal layer (40) and an insulation layer (30) arranged between the first- and further metal layers, comprises applying the first metal layer on the substrate by a vacuum coating process, and applying the transparent insulation layer on the first metal layer and the further metal layer on the insulation layer by the further vacuum coating process. The method for producing a layer system on a dielectric substrate (10) having a first reflecting metal layer (20) and a layer structure, which is arranged on the side of the first metal layer opposite to the substrate with a further reflecting metal layer (40) and an insulation layer (30) arranged between the first- and further metal layers, comprises applying the first metal layer on the substrate by a vacuum coating process, and applying the transparent insulation layer on the first metal layer and the further metal layer on the insulation layer by the further vacuum coating process for the production of the layer structure. The first metal layer and the further metal layer have a surface resistance of greater than 10 MOhm. The transparent insulation layer has an average transmittance of greater than 50%. The number (n) of the application steps is greater than 0, so that the average total reflection factor of the first metal layer and the layer structure is greater than 40%. One of the metal layers has an average reflection factor of = 50% or = 25%. A physical vapor deposition process or a chemical vapor deposition process is assigned as the vacuum coating process. The insulation layer is completely or partially applied by oxidation, nitridation and/or carbidation of the arranged metal layer. A silicon oxide layer is used as insulation layer. The vacuum continuously remains during the production of the layer system. The insulation layer is applied on the top metal layer of the layer structure. A covering layer (50) is applied on the top of the metal layer or on the top of the insulation layer. An adhesive layer is applied between the first metal layer and the substrate. An independent claim is included for a layer system on a dielectric substrate having a first reflecting metal layer and a layer structure.